Realization of ferroelectricity in sputtered Al1-xScxN films with a wide range of Sc content
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Reference43 articles.
1. AlScN: a III-V semiconductor based ferroelectric;Fichtner;J. Appl. Phys.,2019
2. Effects of deposition conditions on the ferroelectric properties of (Al1−xScx)N thin films;Yasuoka;J. Appl. Phys.,2020
3. Thermal Characterization of Ferroelectric Aluminum Scandium Nitride Acoustic Resonators;Wang;2021 IEEE 34th Int. Conf. Micro Electro Mech. Syst. (MEMS). 00,2021
4. S. Fichtner, D. Kaden, F. Lofink, B. Wagner, A Generic CMOS Compatible Piezoelectric Multilayer Actuator Approach Based on Permanent Ferroelectric Polarization Inversion In Al1-x ScxN, 2019 20th Int. Conf. Solid-State Sens., Actuators Microsyst. Eurosensors XXXIII (TRANSDUCERS EUROSENSORS XXXIII). 00 (2019) 289–292. https://doi.org/10.1109/transducers.2019.8808624.
5. Post-CMOS compatible aluminum scandium nitride/2D channel ferroelectric field-effect-transistor memory;Liu;Nano Lett.,2021
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