A Generic CMOS Compatible Piezoelectric Multilayer Actuator Approach Based on Permanent Ferroelectric Polarization Inversion In Al1-X ScxN-Reference-Cited by-同舟云学术

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A Generic CMOS Compatible Piezoelectric Multilayer Actuator Approach Based on Permanent Ferroelectric Polarization Inversion In Al1-X ScxN

Published:2019-06 Issue: Volume: Page:
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Container-title:2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)
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Author:

Fichtner Simon,Kaden Dirk,Lofink Fabian,Wagner Bernhard

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8787960/8808173/08808624.pdf?arnumber=8808624

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Realization of ferroelectricity in sputtered Al1-xScxN films with a wide range of Sc content;Materials Today Communications;2024-06

2. In-plane ferroelectric switching of non-polar wurtzite AlScN films using SAW resonators;Semiconductors and Semimetals;2023

3. Influence of structural properties on the ferroelectric behavior of hexagonal AlScN;Journal of Applied Physics;2022-09-21

4. Influence of sputtering power on the switching and reliability of ferroelectric Al_0.7Sc_0.3N films;Japanese Journal of Applied Physics;2022-04-01

5. Aluminum scandium nitride-based metal–ferroelectric–metal diode memory devices with high on/off ratios;Applied Physics Letters;2021-05-17

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