Influence of sputtering power on the switching and reliability of ferroelectric Al0.7Sc0.3N films

Abstract

Abstract The sputtering power dependence of 40 nm thick Al0.7Sc0.3N ferroelectric properties was characterized from 200 to 300 W. X-ray rocking curve revealed higher orientated growth into the c-axis with higher sputtering power. Films formed by high power showed reduced leakage current with a higher breakdown field, enabling one to apply the high field for ferroelectric switching. A high remnant polarization (P r) of 130 μC cm−2 was obtained with a coercive field (E c) of 6 MV cm−1. The switching cycle test revealed a wake-up effect for all the films; increasing the leakage current and modifying the E c. We anticipate the change is attributed to the existence and the generation of nitrogen vacancies (V N) in the films.