An Ultra-Dense One-Transistor Ternary-Content-Addressable Memory Array Based on Non-Volatile and Ambipolar Fin Field-Effect Transistors
Author:
Affiliation:
1. Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, CAS, Beijing, China
2. Beijing Superstring Academy of Memory Technology, Beijing, China
Funder
National Natural Science Foundation of China
Science and Technology program of Beijing Nova Program
Youth Innovation Promotion Association, Chinese Academy of Sciences
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10053598/10034438.pdf?arnumber=10034438
Reference24 articles.
1. Ternary content-addressable memory with MoS2 transistors for massively parallel data search
2. Low-temperature (≤550 °C) p-channel Schottky barrier SOI FinFETs for monolithic 3D integration
3. Exploring Hyperdimensional Associative Memory
4. Overview and status of metal S/D Schottky-barrier MOSFET technology
5. 1 Mb 0.41 µm² 2T-2R Cell Nonvolatile TCAM With Two-Bit Encoding and Clocked Self-Referenced Sensing
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