8F² Ternary Content Addressable Memory Array Utilizing Interface Passivated Ge Memory-Diodes With 2 × 10⁵ Self-Rectifying Ratio-Reference-Cited by-同舟云学术

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8F² Ternary Content Addressable Memory Array Utilizing Interface Passivated Ge Memory-Diodes With 2 × 10⁵ Self-Rectifying Ratio

Published:2024-05 Issue:5 Volume:45 Page:833-836
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Ding Xiang¹^ORCID,Zhang Huimin²,Wang Xianggao¹^ORCID,Zhou Xiaofeng²,Lee ChoongHyun¹^ORCID,Zhao Yi³^ORCID

Affiliation:

1. College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China

2. School of Integrated Circuits, East China Normal University, Shanghai, China

3. International Joint Innovation Center, Zhejiang University, Haining, China

Funder

National Key Research and Development Program of China

Shanghai Science and Technology Funding Project

“Pioneer” and “Leading Goose” Research and Development Program of Zhejiang Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10509537/10478634.pdf?arnumber=10478634

Reference32 articles.

1. Content-Addressable Memory (CAM) Circuits and Architectures: A Tutorial and Survey

2. A 65-nm 0.6-fJ/Bit/Search Ternary Content Addressable Memory Using an Adaptive Match-Line Discharge

3. Emerging Trends in Design and Applications of Memory-Based Computing and Content-Addressable Memories

4. Match Sensing Using Match-Line Stability in Content-Addressable Memories (CAM)

5. A 250-MHz 18-Mb Full Ternary CAM With Low-Voltage Matchline Sensing Scheme in 65-nm CMOS

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