A 65-nm 0.6-fJ/Bit/Search Ternary Content Addressable Memory Using an Adaptive Match-Line Discharge-Reference-Cited by-同舟云学术

A 65-nm 0.6-fJ/Bit/Search Ternary Content Addressable Memory Using an Adaptive Match-Line Discharge

Author:

Lee Kyeongho,Choi Woong^ORCID,Park Jongsun^ORCID

Funder

National Research Foundation of Korea Grant

Korea Government

Institute for Information & Communications Technology Promotion (IITP) Grant

Development of Intelligent SoC having Multimodal IOT Interface for Data Sensing, Edge Computing Analysis and Data Sharing

Next Generation Semiconductor Research and Development Program

Ministry of Trade, Industry & Energy

Sookmyung Women’s University Research Grants

Samsung Electronics Co., Ltd

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

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