Multibit Content Addressable Memory Design and Optimization Based on 3-D nand-Compatible IGZO Flash-Reference-Cited by-同舟云学术

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Multibit Content Addressable Memory Design and Optimization Based on 3-D nand-Compatible IGZO Flash

Published:2024-08 Issue:8 Volume:32 Page:1380-1388
ISSN:1063-8210
Container-title:IEEE Transactions on Very Large Scale Integration (VLSI) Systems
language:
Short-container-title:IEEE Trans. VLSI Syst.

Author:

Li Chao¹^ORCID,Sun Chen²^ORCID,Yang Jianyi³^ORCID,Ni Kai⁴^ORCID,Gong Xiao²^ORCID,Zhuo Cheng³^ORCID,Yin Xunzhao¹^ORCID

Affiliation:

1. College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China

2. Department of Electrical and Computer Engineering, National University of Singapore, Queenstown, Singapore

3. College of Integrated Circuits, Zhejiang University, Hangzhou, China

4. Electrical Engineering Department, University of Notre Dame, Notre Dame, IN, USA

Funder

National Natural Science Foundation of China

Sino-German Center for Research Promotion Cooperation Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/92/10609530/10521670.pdf?arnumber=10521670

Reference40 articles.

1. Next generation routers

2. Ferroelectric ternary content-addressable memory for one-shot learning

3. Tree-based machine learning performed in-memory with memristive analog CAM

4. Deep random forest with ferroelectric analog content addressable memory

5. Emerging Trends in Design and Applications of Memory-Based Computing and Content-Addressable Memories

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