On the Challenges and Design Mitigations of Single Transistor Ferroelectric Content Addressable Memory-Reference-Cited by-同舟云学术

On the Challenges and Design Mitigations of Single Transistor Ferroelectric Content Addressable Memory

Author:

Xu Haotian¹^ORCID,Yang Jianyi²,Kämpfe Thomas³^ORCID,Zhuo Cheng²^ORCID,Ni Kai⁴^ORCID,Yin Xunzhao¹^ORCID

Affiliation:

1. College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China

2. School of Micro-Nano Electronics, Zhejiang University, Hangzhou, China

3. Fraunhofer IPMS, Dresden, Germany

4. Electrical Engineering Department, University of Notre Dame, Notre Dame, IN, USA

Funder

NSFC

National Key Research and Development Program of China

Zhejiang Provincial NSF

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

Reference23 articles.

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