One-Transistor Ternary Content-Addressable Memory Based on Localized Ferroelectric Switching for Massive and Accurate Routing-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

One-Transistor Ternary Content-Addressable Memory Based on Localized Ferroelectric Switching for Massive and Accurate Routing

Published:2024-02 Issue:2 Volume:45 Page:144-147
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Ryu Minjeong¹^ORCID,Woo Jae Seung¹^ORCID,Jung Chae Lin²,Choi Woo Young¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering and the Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, Republic of Korea

2. Department of Electronic Engineering, Sogang University, Seoul, Republic of Korea

Funder

Samsung Research Funding and Incubation Center of Samsung Electronics

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10415514/10368131.pdf?arnumber=10368131

Reference30 articles.

1. A Scalable Design of Multi-Bit Ferroelectric Content Addressable Memory for Data-Centric Computing

2. FeCAM: A Universal Compact Digital and Analog Content Addressable Memory Using Ferroelectric

3. Ferroelectric ternary content-addressable memory for one-shot learning

4. Content-Addressable Memory (CAM) Circuits and Architectures: A Tutorial and Survey

5. Emerging Trends in Design and Applications of Memory-Based Computing and Content-Addressable Memories

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP