Al<sub>0.1</sub>Ga<sub>0.9</sub>N p-i-n Ultraviolet Avalanche Photodiodes With Avalanche Gain Over 10<sup>6</sup>-Reference-Cited by-同舟云学术

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Al_0.1Ga_0.9N p-i-n Ultraviolet Avalanche Photodiodes With Avalanche Gain Over 10⁶

Published:2022-09 Issue:9 Volume:43 Page:1479-1482
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

You Haifan¹^ORCID,Wang Haiping¹,Luo Weike²,Wang Yiwang¹,Liu Xinghua¹,Shao Zhenguang³,Chen Dunjun¹^ORCID,Lu Hai¹^ORCID,Zhang Rong¹,Zheng Youdou¹

Affiliation:

1. School of Electronic Science and Engineering, Nanjing University, Nanjing, China

2. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, China

3. College of Physics and Electronic Engineering, Changshu Institute of Technology, Changshu, China

Funder

National Natural Science Foundation of China

National Science Foundation of China

Key Research and Development Project of Jiangsu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9866921/09839456.pdf?arnumber=9839456

Reference25 articles.

1. Do all screw dislocations cause leakage in GaN-based devices?

2. Surface smoothing with BCl3 plasma post-treatment to improve the performance of GaN avalanche photodiodes

3. Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability

4. Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown

5. High-voltage mesa-structure GaN Schottky rectifiers processed by dry and wet etching

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1. Enhancing GaN/AlxGa1−xN-Based Heterojunction Phototransistors: The Role of Graded Base Structures in Performance Improvement;Micromachines;2024-06-13

2. High-Performance Al₀.₁Ga₀.₉N p-i-n Ultraviolet Avalanche Photodiodes With Ultra-Shallow Bevel Edge Terminations;IEEE Electron Device Letters;2024-05

3. Self-powered AlGaN-based MSM solar-blind ultraviolet photodetectors with high Al-content AlxGa1−xN/AlyGa1−yN asymmetrical heterostructure;Applied Physics Letters;2023-12-04

4. Al_0.1Ga_0.9N p-i-n ultraviolet avalanche photodiodes with suppressed surface leakage current and uniform avalanche breakdown;Optics Express;2023-10-23

5. High performance InGaN/GaN visible-light field effect phototransistor using polarization induced virtual photogate;Applied Physics Letters;2023-07-31

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