High-voltage mesa-structure GaN Schottky rectifiers processed by dry and wet etching
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1322050
Reference12 articles.
1. Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers
2. Performance evaluation of high-power wide band-gap semiconductor rectifiers
3. Steady-state and transient forward current-voltage characteristics of 4H-silicon carbide 5.5 kV diodes at high and superhigh current densities
4. A 3 kV Schottky barrier diode in 4H-SiC
5. 5.5 kV Bipolar Diodes From High Quality CVD 411-SiC
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