Simulation and Characterization Studies of GaN-Based Quasi-Vertical MIS SBD-Reference-Cited by-同舟云学术

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Simulation and Characterization Studies of GaN-Based Quasi-Vertical MIS SBD

Published:2023-02-07 Issue: Volume: Page:
ISSN:
Container-title:2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
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Author:

Li Jing¹,Cheng Haijuan¹,Qin Yalong¹,Xu Xiucheng¹,Guo Weiling¹

Affiliation:

1. Beijing University of Technology,Faculty of Information Optoelectronics Technology Lab, Ministry of Education,Beijing

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10070854/10070925/10070950.pdf?arnumber=10070950

Reference12 articles.

1. Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 1010 High On/Off Current Ratio and Low Specific On-Resistance

2. GaN-on-Si Vertical Schottky and p-n Diodes

3. New and unified model for Schottky barrier and III–V insulator interface states formation

4. 1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse p-n Junction Termination

5. GaN Electronics

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 1.43 kV GaN-based MIS Schottky barrier diodes;Journal of Physics D: Applied Physics;2024-02-09

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