Research progress in the postprocessing and application of GaN crystal-Reference-Cited by-同舟云学术

Research progress in the postprocessing and application of GaN crystal

Published:2023 Issue:5 Volume:25 Page:715-725
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Li Qiubo¹,Yu Jiaoxian²,Wang Shouzhi¹^ORCID,Wang Guodong¹,Liu Guangxia³,Liu Lei¹,Zhang Shiying⁴,Xu Xiangang¹,Zhang Lei¹^ORCID

Affiliation:

1. Institute of Novel Semiconductors, State Key laboratory of Crystal Material, Shandong University, Jinan, 250100, P. R. China

2. Key Laboratory of Processing and Testing Technology of Glass & Functional Ceramics of Shandong Province, School of Materials Science and Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, P. R. China

3. Energy Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, P. R. China

4. School of Science, Shandong Jianzhu University, Jinan 250101, P. R. China

Abstract

This manuscript systematically reviews the importance of wet etching and thermal annealing in GaN crystal applications for the first time.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Shenzhen Science and Technology Innovation Program

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CE/D2CE01539K

Reference66 articles.

1. Analysis of electrical properties in Ni/GaN schottky contacts on nonpolar/semipolar GaN free-standing substrates

2. High-mobility GaN-on-sapphire p-n diodes with near-unity ideality factor and large breakdown voltage

3. From bulk to porous GaN crystal: precise structural control and its application in ultraviolet photodetectors

4. A perovskite/porous GaN crystal hybrid structure for ultrahigh sensitivity ultraviolet photodetectors

5. Temperature effects for GaN films grown on 4H-SiC substrate with 4° miscutting orientation by plasma-assisted molecular beam epitaxy

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