Analysis of electrical properties in Ni/GaN schottky contacts on nonpolar/semipolar GaN free-standing substrates-Reference-Cited by-同舟云学术

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Analysis of electrical properties in Ni/GaN schottky contacts on nonpolar/semipolar GaN free-standing substrates

Published:2022-03 Issue: Volume:898 Page:162817
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Ren Yuan,He Zhiyuan,Dong Bin,Wang Changan,Zeng Zhaohui,Li Qixin,Chen Zhitao,Li Liuan,Liu Ningyang

Funder

China Postdoctoral Science Foundation

Science and Technology Development Fund

Special Project for Research and Development in Key areas of Guangdong Province

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference48 articles.

1. High-mobility GaN-on-sapphire p-n diodes with near-unity ideality factor and large breakdown voltage;Kotzea;J. Phys. D. Appl. Phys.,2019

2. Current status and future trends of GaN HEMTs in electrified transportation;Keshmiri;IEEE Access,2020

3. Macrodefect-free, large, and thick GaN bulk crystals for high-quality 2–6 in. GaN substrates by hydride vapor phase epitaxy with hardness control;Fujikura;Jpn. J. Appl. Phys.,2018

4. Bulk GaN substrate with overall dislocation density on the order of 105/cm2 fabricated by hydride vapor phase epitaxy;Goubara;J. Cryst. Growth,2017

5. High voltage vertical GaN p-n diodes with hydrogen-plasma based guard rings;Fu;IEEE Electron Device Lett.,2020

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1. The Electrical and Photodetector Characteristics of the Graphene:PVA/p-Si Schottky Structures Depending on Illumination Intensities;ACS Omega;2024-07-11

2. Amorphous GaN: Polyamorphism and crystallization at high pressure;Computational Materials Science;2024-05

3. A Review on Reverse-Bias Leakage Current Transport Mechanisms in Metal/GaN Schottky Diodes;Transactions on Electrical and Electronic Materials;2024-02-03

4. Effect of biologically synthesized iron-oxide nanoparticles insulating layer on current-voltage characteristics of Ni/Cr/Ni/n-GaN Schottky junction;Materials Science and Engineering: B;2024-01

5. Comparing Electrical Performance of Lateral GaN Schottky Barrier Diode with A-Plane ($11\bar2 0$) and M-Plane ($1\bar1 00$) Nonpolar Sidewall Contact;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

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