Do all screw dislocations cause leakage in GaN-based devices?-Reference-Cited by-同舟云学术

Do all screw dislocations cause leakage in GaN-based devices?

Published:2020-02-10 Issue:6 Volume:116 Page:062104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Jin¹^ORCID,You Haifan¹,Guo Hui¹,Xue Junjun²,Yang Guofeng³,Chen Dunjun¹^ORCID,Liu Bin¹^ORCID,Lu Hai¹,Zhang Rong¹,Zheng Youdou¹

Affiliation:

1. Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

2. School of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China

3. School of Science, Jiangnan University, Wuxi 214122, China

Funder

National Key R&D Program of China

333 Project of Jiangsu Province

Scientific Research Foundation of Graduate School of Nanjing University

National Science Foundation of China

Natural Science Foundation of Jiangsu Province

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5135960

Reference23 articles.

1. Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors

2. Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application

3. AlGaN ultraviolet Avalanche photodiodes based on a triple-mesa structure

4. Manipulable and Hybridized, Ultralow-Threshold Lasing in a Plasmonic Laser Using Elliptical InGaN/GaN Nanorods

5. GaN, AlN, and InN: A review

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