Reducing leakage current in GaN-Schottky diodes by suppressing hollow core nanopipes-Reference-Cited by-同舟云学术

Reducing leakage current in GaN-Schottky diodes by suppressing hollow core nanopipes

Published:2024-03-01 Issue:3 Volume:14 Page:
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:

Author:

Yang Qian¹²^ORCID,Yang Jing¹^ORCID,Long Haoran²³,Liu Zongshun¹^ORCID,Duan Lihong¹,Zhao Degang¹⁴^ORCID

Affiliation:

1. State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083, China

2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences 2 , Beijing 100049, China

3. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences 3 , Beijing 100083, China

4. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences 4 , Beijing 100049, China

Abstract

The nanopipes in GaN films grown on sapphire substrates using metal-organic chemical vapor deposition were identified as leakage-related defects through investigations by PeakForce tunneling atomic force microscopy. An insertion layer of n-Al0.03Ga0.97N can prevent nanopipes from extending, thereby reducing the leakage current of Schottky diodes. By analyzing the element’s distribution in and out of nanopipes on epitaxial wafers, it is inferred that segregation of Ga around nanopipes may be responsible for the leakage.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Strategic Priority Research Program of Chinese Academy of Sciences

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Publisher

AIP Publishing

Link

https://pubs.aip.org/aip/adv/article-pdf/doi/10.1063/5.0200855/19705643/035005_1_5.0200855.pdf

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