Breakdown Mechanisms of Power Semiconductor Devices-Reference-Cited by-同舟云学术

Breakdown Mechanisms of Power Semiconductor Devices

Published:2018-04-23 Issue:3 Volume:36 Page:243-252
ISSN:0256-4602
Container-title:IETE Technical Review
language:en
Short-container-title:IETE Technical Review

Author:

Guo Haijun¹,Duan Baoxing¹,Wu Hao¹,Yang Yintang¹

Affiliation:

1. Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University , No. 2 South TaiBai Road Xi'an, Shaanxi 710071, PR China

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Key Program of the National Natural Science Foundation of China

111 Project

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/02564602.2018.1450652

Reference51 articles.

1. On the surface electric field of junction diodes with a tapered window

2. High-voltage planar junction with a field-limiting ring

3. New thin-film power MOSFETs with a buried oxide double step structure

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