TCAD Simulation of Novel Recess Gate Common Drain Dual Channel AlGaN/GaN HEMT for Small Signal Performance-Reference-Cited by-同舟云学术

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TCAD Simulation of Novel Recess Gate Common Drain Dual Channel AlGaN/GaN HEMT for Small Signal Performance

Published:2024-04-15 Issue:5 Volume:41 Page:621-631
ISSN:0256-4602
Container-title:IETE Technical Review
language:en
Short-container-title:IETE Technical Review

Author:

Pal P.¹,Pratap Y.²,Kabra S.³

Affiliation:

1. Nanolab, Department of Electrical Engineering, Indian Institute of Technology, Kanpur, India

2. Department of Electronic Science, University of Delhi, New Delhi, India

3. Modeling and Simulation Research Laboratory, Shaheed Rajguru College of Applied Sciences for Women, University of Delhi, New Delhi, India

Funder

Science and Engineering Research Board, Department of Science and Technology

Publisher

Informa UK Limited

Link

https://www.tandfonline.com/doi/pdf/10.1080/02564602.2024.2341086

Reference40 articles.

1. Dynamic Power Supply Transmitters

2. Comparing FET Technologies in Terms of Their Suitability for Broadband Envelope Tracking Power Amplifiers

3. Influence of AlGaN and InGaN Back Barriers on the Performance of AlGaN/GaN HEMT

4. Breakdown Mechanisms of Power Semiconductor Devices

5. The Analysis Model of AlGaN/GaN HEMTs with Electric Field Modulation Effect

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