Affiliation:
1. High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China
2. School of Integrated Circuits University of Chinese Academy of Sciences Beijing 100049 China
Abstract
An extended PGaN structure is proposed and successfully adopted on a Schottky PGaN enhancement‐mode GaN high‐electron‐mobility transistor (HEMT) platform. The device features a drain saturation current of 256 mA mm−1, a threshold voltage of +1.8 V, and an ON resistance of 19.781 Ω mm. It is found that using the PGaN extension structure on both HEMTs and circle Schottky barrier diodes (SBDs) efficiently reduces leakage current across a wide temperature range (from −55 °C to 150 °C). Furthermore, multifrequency CV measurements of interdigitated SBDs are employed to assess the extension structure's dynamic responsiveness.
Funder
National Natural Science Foundation of China
Youth Innovation Promotion Association of the Chinese Academy of Sciences
CAS-Croucher Funding Scheme for Joint Laboratories
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
3 articles.
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