Effect of Al2O3 thickness and oxidant precursors on the interface composition and contamination in Al2O3/GaN structures-Reference-Cited by-同舟云学术

Effect of Al₂O₃ thickness and oxidant precursors on the interface composition and contamination in Al₂O₃/GaN structures

Published:2024-03-03 Issue:7 Volume:56 Page:399-407
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surface & Interface Analysis

Author:

Spelta Tarek¹^ORCID,Martinez Eugénie¹^ORCID,Veillerot Marc¹,Fernandes Paes Pinto Rocha Pedro¹²,Vauche Laura¹,Salem Bassem²,Hyot Bérangère¹

Affiliation:

1. Université Grenoble Alpes, CEA, Leti Grenoble France

2. Université Grenoble Alpes, CNRS, CEA/LETI‐Minatec, Grenoble INP, LTM Grenoble France

Abstract

In this paper, we investigate the Al2O3/GaN critical buried interface of the next generation of gallium nitride (GaN)‐based transistors using time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) and hard X‐ray photoelectron spectroscopy (HAXPES). Results highlight that gallium oxidation at this interface is enhanced when increasing the Al2O3 thickness from 3 up to 20 nm. Gallium oxidation is reduced when using both O3 and H2O as oxidant precursors, compared with only H2O during the growth of Al2O3. In addition, the O3/H2O‐based Al2O3 favors a reduction of contaminants such as hydrogen and carbon but enhances the presence of halides (Cl− and F−) at this Al2O3/GaN interface.

Funder

Agence Nationale de la Recherche

Publisher

Wiley

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