Author:
Usami Shigeyoshi,Tanaka Atsushi,Fukushima Hayata,Ando Yuto,Deki Manato,Nitta Shugo,Honda Yoshio,Amano Hiroshi
Abstract
Abstract
We fabricated p−n diodes under different growth pressures on free-standing GaN substrates of the same quality and observed a noteworthy difference in the reverse leakage current. A large reverse leakage current was generated by nanopipes, which were formed from screw dislocations in the homoepitaxial layer. There were two types of screw dislocation observed in this study. The first type already existed in the substrate and the other was newly generated in the epilayer by the coalescence of edge and mixed dislocations. An increase in the growth pressure suppressed the transformation of screw dislocations into nanopipes, which led to a reduction in the reverse leakage current. To reduce the leakage current further, it is necessary to apply growth conditions that do not transform screw dislocation into nanopipes and to use a free-standing substrate without threading dislocations, that become nanopipes.
Funder
Ministry of Education, Culture, Sports, Science and Technology
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
31 articles.
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