High-breakdown-voltage pn-junction diodes on GaN substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Electrical characterization of GaN p-n junctions with and without threading dislocations
2. Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate
3. Growth and characterization of GaN PiN rectifiers on free-standing GaN
4. Current-voltage characteristics of p‐InGaN∕n‐GaN vertical conducting diodes on n+‐SiC substrates
5. A review of junction field effect transistors for high-temperature and high-power electronics
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2. High Breakdown Voltage and High Current Injection Vertical GaN-on-GaN p-n Diodes With Extremely Low On-Resistance Fabricated on Ammonothermally Grown Bulk GaN Substrates;IEEE Transactions on Electron Devices;2022-11
3. 930V and Low-Leakage Current GaN-on-Si Quasi-Vertical PiN Diode With Beveled-Sidewall Treated by Self-Aligned Fluorine Plasma;IEEE Electron Device Letters;2022-09
4. Investigation of the Reverse Leakage Behavior and Substrate Defects in Vertical GaN Schottky and PIN Diodes;ECS Journal of Solid State Science and Technology;2022-06-01
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