Growth and characterization of GaN PiN rectifiers on free-standing GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2001738
Reference18 articles.
1. Performance evaluation of high-power wide band-gap semiconductor rectifiers
2. Monte Carlo calculation of electron initiated impact ionization in bulk zinc-blende and wurtzite GaN
3. High voltage (450 V) GaN Schottky rectifiers
4. Al composition dependence of breakdown voltage in AlxGa1−xN Schottky rectifiers
5. High-voltage mesa-structure GaN Schottky rectifiers processed by dry and wet etching
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