High Breakdown Voltage and High Current Injection Vertical GaN-on-GaN p-n Diodes With Extremely Low On-Resistance Fabricated on Ammonothermally Grown Bulk GaN Substrates-Reference-Cited by-同舟云学术

High Breakdown Voltage and High Current Injection Vertical GaN-on-GaN p-n Diodes With Extremely Low On-Resistance Fabricated on Ammonothermally Grown Bulk GaN Substrates

Published:2022-11 Issue:11 Volume:69 Page:6255-6259
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Taube Andrzej¹^ORCID,Kaminski Maciej¹^ORCID,Tarenko Jaroslaw¹,Sadowski Oskar¹,Ekielski Marek¹,Szerling Anna¹,Prystawko Pawel²^ORCID,Bockowski Michal²,Grzegory Izabella²

Affiliation:

1. Łukasiewicz Research Network-Institute of Microelectronics and Photonics, Warsaw, Poland

2. Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9926983/09912372.pdf?arnumber=9912372

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