Sub-Bandgap Photoconductive High Voltage Switch of Mn:GaN Semiconductor-Reference-Cited by-同舟云学术

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Sub-Bandgap Photoconductive High Voltage Switch of Mn:GaN Semiconductor

Published:2024-09 Issue:9 Volume:71 Page:5245-5250
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ščajev Patrik¹^ORCID,Subačius Liudvikas²^ORCID,Prystawko Pawel³^ORCID,Kucharski Robert³,Kašalynas Irmantas²^ORCID

Affiliation:

1. Institute of Photonics and Nanotechnology, Faculty of Physics, Vilnius University, Vilnius, Lithuania

2. Terahertz Photonics Laboratory, Center for Physical Sciences and Technology, Vilnius, Lithuania

3. Laboratory of Semiconductor Characterization, Institute of High Pressure Physics PAS (UNIPRESS), Warsaw, Poland

Funder

Research Council of Lithuania (Lietuvos Mokslo Taryba) through the “Hybrid Plasmonic Components for THz Range (T-HP)” Project

European Regional Development Fund through the “Research Projects Implemented by World-Class Researcher Groups”

European Cooperation in Science and Technology (COST) Action: “European Network for Innovative and Advanced Epitaxy”

National Science Centre, Poland

National Center for Research and Development

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10645717/10604847.pdf?arnumber=10604847

Reference34 articles.

1. GaN-based power devices: Physics, reliability, and perspectives

2. Hot phonons in Si-doped GaN

3. Self-Heating of Annealed Ti/Al/Ni/Au Contacts to Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures

4. High Breakdown Voltage and High Current Injection Vertical GaN-on-GaN p-n Diodes With Extremely Low On-Resistance Fabricated on Ammonothermally Grown Bulk GaN Substrates

5. Precise, subnanosecond, and high-voltage switching enabled by gallium nitride electronics integrated into complex loads

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