Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability
Author:
Funder
Ministry of Education, Culture, Sports, Science and Technology
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.7567/1347-4065/ab106c/pdf
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