Effect of low-temperature-grown GaN cap layer on reduced leakage current of GaN Schottky diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1861113
Reference21 articles.
1. AlGaN/GaN high electron mobility field effect transistors with low 1/f noise
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3. Thermally stable PtSi Schottky contact on n-GaN
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5. Schottky barrier height and surface state density of Ni/Au contacts to (NH4)2Sx-treated n-type GaN
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