Thermally stable PtSi Schottky contact on n-GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118551
Reference17 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. Suppression of leakage currents and their effect on the electrical performance of AlGaN/GaN modulation doped field‐effect transistors
3. High transconductance heterostructure field‐effect transistors based on AlGaN/GaN
4. Ion‐implanted GaN junction field effect transistor
5. FUNDAMENTAL TRANSITION IN THE ELECTRONIC NATURE OF SOLIDS
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