Radiation Effects in AlGaN/GaN HEMTs
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, Vanderbilt University, Nashville, TN, USA
2. Department of Physics and Astronomy and the Department of Electrical and Computer Engineering, Vanderbilt University, Nashville, TN, USA
Funder
Air Force Office of Scientific Research and the Air Force Research Laboratory through the Hi-REV Program
U.S. Air Force through the Radiation Effects Center of Excellence
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Link
http://xplorestaging.ieee.org/ielx7/23/9777895/09694601.pdf?arnumber=9694601
Reference126 articles.
1. Quantum Mechanical Modeling of Radiation-Induced Defect Dynamics in Electronic Devices
2. $1/f$ Noise and Defects in Microelectronic Materials and Devices
3. Total-Ionizing-Dose Radiation Effects in AlGaN/GaN HEMTs and MOS-HEMTs
4. Worst-Case Bias for Proton and 10-keV X-Ray Irradiation of AlGaN/GaN HEMTs
5. X-Ray Wafer Probe for Total Dose Testing
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