Low Leakage and High Gain GaN p-i-n Avalanche Photodiode With Shallow Bevel Mesa Edge Termination and Recessed Window-Reference-Cited by-同舟云学术

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Low Leakage and High Gain GaN p-i-n Avalanche Photodiode With Shallow Bevel Mesa Edge Termination and Recessed Window

Published:2024-06 Issue:6 Volume:71 Page:3761-3768
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Xu Zhiyu¹^ORCID,Detchprohm Theeradetch¹^ORCID,Shen Shyh-Chiang¹^ORCID,Nepomuk Otte A.²^ORCID,Dupuis Russell D.¹^ORCID

Affiliation:

1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA

2. School of Physics, Georgia Institute of Technology, Atlanta, GA, USA

Funder

Steve W. Chaddick Chair in Electro-Optics through the U.S. Department of Energy

Army Research Office

Facilities of the Georgia Tech Institute for Electronics and Nanotechnology, a member of the National Nanotechnology Coordinated Infrastructure

National Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

https://ieeexplore.ieee.org/ielam/16/10538150/10522630-aam.pdf

Reference49 articles.

1. The Essential Physics of Medical Imaging, Third Edition.

2. Formation and Processing of UV Photoproducts: Effects of DNA Sequence and Chromatin Environment

3. Application of ultraviolet light-emitting diodes (UV-LEDs) for water disinfection: A review

4. THE VERY HIGH ENERGY EMISSION FROM PULSARS: A CASE FOR INVERSE COMPTON SCATTERING

5. Manufacturing with DUV lithography

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