High-Performance Al₀.₁Ga₀.₉N p-i-n Ultraviolet Avalanche Photodiodes With Ultra-Shallow Bevel Edge Terminations
Author:
Affiliation:
1. School of Electronic Science and Engineering, Nanjing University, Nanjing, China
2. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, China
Funder
National Key Research and Development Program of China
National Science Foundation of China
Key Research and Development Project of Jiangsu
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/55/10509537/10466363.pdf?arnumber=10466363
Reference32 articles.
1. Development of high gain GaN/AlGaN avalanche photodiode arrays for UV detection and imaging applications;Sood;Int. J. Eng. Res. Technol.,2017
2. Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays
3. Progress on photovoltaic AlGaN photodiodes for solar-blind ultraviolet photodetection
4. On the Scope of GaN-Based Avalanche Photodiodes for Various Ultraviolet-Based Applications
5. Comparison of AlGaN p–i–n ultraviolet avalanche photodiodes grown on free-standing GaN and sapphire substrates
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