3D NAND Flash Status and Trends
Author:
Affiliation:
1. Advanced NAND Technology, Micron Technology, Inc.,Boise,USA
2. Technology and Product Strategy, Micron Technology, Inc.,San Jose,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9779263/9779243/09779282.pdf?arnumber=9779282
Reference13 articles.
1. 30.3 A 512Gb 3b/Cell 7th -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface
2. A floating gate based 3D NAND technology with CMOS under array
3. 7.7 A 768Gb 3b/cell 3D-floating-gate NAND flash memory
4. 13.5 A 512Gb 3-bit/Cell 3D Flash Memory on 128-Wordline-Layer with 132MB/s Write Performance Featuring Circuit-Under-Array Technology
5. Understanding the kinetics of Metal Induced Lateral Crystallization process to enhance the poly-Si channel quality and current conduction in 3-D NAND memory
Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Innovative Programming Approaches to Address Z-Interference in High-Density 3D NAND Flash Memory;Electronics;2024-08-07
2. Understanding the Memory Window of Ferroelectric FET and Demonstration of 4.8-V Memory Window With 20-nm HfO2;IEEE Transactions on Electron Devices;2024-08
3. Impact of Tier Pitch Scaling on Heavy-Ion Sensitivity of 3-D NAND Flash Memories;IEEE Transactions on Nuclear Science;2024-08
4. Unveiling polycrystalline silicon channel dissolution mechanism in wet etching process of 3D NAND fabrication;Surfaces and Interfaces;2024-07
5. High-Density Embedded 3-D Stackable Via RRAM in 16-nm FinFET CMOS Logic Process;IEEE Transactions on Electron Devices;2024-06
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3