Impact of Tier Pitch Scaling on Heavy-Ion Sensitivity of 3-D NAND Flash Memories
Author:
Affiliation:
1. Dipartimento di Ingegneria dell’Informazione-DEI, RREACT Group, Università di Padova, Padova, Italy
2. Micron Technology - Technology Development, Vimercate, Italy
Funder
European Union’s 2020 Research and Innovation Program
RADNEXT Project
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/23/10638256/10409223.pdf?arnumber=10409223
Reference20 articles.
1. Non volatile memory evolution and revolution
2. Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices
3. 3-D NAND Technology Achievements and Future Scaling Perspectives
4. A floating gate based 3D NAND technology with CMOS under array
5. Recent Progress on 3D NAND Flash Technologies
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