Understanding the kinetics of Metal Induced Lateral Crystallization process to enhance the poly-Si channel quality and current conduction in 3-D NAND memory-Reference-Cited by-同舟云学术

Understanding the kinetics of Metal Induced Lateral Crystallization process to enhance the poly-Si channel quality and current conduction in 3-D NAND memory

Published:2021-12-11 Issue: Volume: Page:
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Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
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Author:

Ramesh S.¹,Palayam S. Vadakupudhu¹,Ajaykumar A.¹,Opsomer K.¹,Bastos J.¹,Ragnarsson L.-A.¹,Breuil L.¹,Arreghini A.¹,Wouters L.¹,Spampinato V.¹,Favia P.¹,Mehta A. Nalin¹,Carolan P.¹,Nyns L.¹,Katcko K.¹,Stiers J.¹,Van den bosch G.¹,Rosmeulen M.¹

Affiliation:

1. IMEC,Leuven,Belgium,B-3001

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720571.pdf?arnumber=9720571

Reference20 articles.

1. Transmission electron microscopy study of Ni–Si nanocomposite films

2. Structural characterization of poly-Si Films crystallized by Ni Metal Induced Lateral Crystallization

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