Insights into device and material origins and physical mechanisms behind cross temperature in 3D NAND-Reference-Cited by-同舟云学术

Insights into device and material origins and physical mechanisms behind cross temperature in 3D NAND

Published:2023-03 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Pesic Milan¹,Beltrando Bastien¹,Rollo Tommaso¹,Zambelli Cristian²,Padovani Andrea³,Micheloni Rino⁴,Maji Rita³,Enman Lisa¹,Saly Mark¹,Bae Yang Ho¹,Kim Jung Bae¹,Yim Dong Kil¹,Larcher Luca¹

Affiliation:

1. Applied Materials Inc.,Santa Clara,CA,USA

2. Università degli Studi di Ferrara,Dipartimento di Ingegneria,Ferrara,Italy

3. DISIMI, Università di Modena e Reggio Emilia,Reggio Emilia,Italy

4. Avaneidi srl,Saronno,VA,Italy

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10117589/10117581/10117898.pdf?arnumber=10117898

Reference57 articles.

1. Unleash Scaling Potential of 3D NAND with Innovative Xtacking® Architecture

2. Comprehensive analysis of retention characteristics in 3-D NAND flash memory cells with tube-type poly-Si channel structure

3. 3D Semicircular Flash Memory Cell: Novel Split-Gate Technology to Boost Bit Density

4. Experimental and theoretical verification of channel conductivity degradation due to grain boundaries and defects in 3D NAND

5. Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory

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1. Exploring Cross-Temperature Reliability in 3D NAND Through Layer-Dependent Bit Error Analysis;2024 IEEE 8th International Test Conference India (ITC India);2024-07-21

2. Cross-Temperature Reliability of 3D NAND: Cell-to-Cell Variability Analysis and Countermeasure;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

3. Low-PBTS defect-engineered high-mobility metal-oxide BEOL transistors;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

4. Blocking Oxide Material Engineering to Improve Retention Loss in 3D NAND: a Modeling Process Optimization Study;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14