Cross-Temperature Reliability of 3D NAND: Cell-to-Cell Variability Analysis and Countermeasure
Author:
Affiliation:
1. Colorado State University,Electrical and Computer Engineering Department,Fort Collins,CO,USA
Funder
National Science Foundation
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529488.pdf?arnumber=10529488
Reference24 articles.
1. Reviewing the Evolution of the NAND Flash Technology
2. 3-D NAND Technology Achievements and Future Scaling Perspectives
3. Reliability of NAND Flash Arrays: A Review of What the 2-D–to–3-D Transition Meant
4. Cross-Temperature Effects of Program and Read Operations in 2D and 3D NAND Flash Memories
5. Dynamic VTH Tracking for Cross-Temperature Suppression in 3D-TLC NAND Flash
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1. Exploring Cross-Temperature Reliability in 3D NAND Through Layer-Dependent Bit Error Analysis;2024 IEEE 8th International Test Conference India (ITC India);2024-07-21
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