Author:
Matsuo Haruki,Yamashita Hiroki,Shimada Yusuke,Ishihara Noritaka,Seto Satoshi,Morita Sho,Ukishima Masafumi,Arayashiki Yusuke,Kajiwara Suzuka,Murayama Akiyuki,Nishiyama Katsuya,Sugimae Kikuko,Mori Shinji,Saito Yuta,Shundo Takeshi,Kanno Yurika,Kamiya Hiroyuki,Uchiyama Yasuhiro,Aisou Fumiki,Sekine Katsuyuki,Ohtani Norio
Abstract
Abstract
Two metal-induced lateral crystallization (MILC) methods are proposed as candidate techniques to enhance cell current in future ultra-high-density NAND-type 3D flash memory devices. The channel crystallinity differs depending on the MILC method. In a single MILC, the channel is composed of single-crystal Si, whereas in a regional MILC, the channel comprises multiple crystal grains that are larger than those of the conventional polycrystalline Si. Using transmission electron microscopy, the inhibiting factor of MILC was modeled to reveal that the two MILC approaches result in different cell current distributions that are related to their degree of crystallinity. A comparison of these two cell current distributions in a 3D flash memory with over 900 word-line stacks showed that the single MILC delivers a higher median cell current with outliers on the lower side. In contrast, the regional MILC delivers a lower median cell current without outliers on the lower side.