Unveiling polycrystalline silicon channel dissolution mechanism in wet etching process of 3D NAND fabrication-Reference-Cited by-同舟云学术

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Unveiling polycrystalline silicon channel dissolution mechanism in wet etching process of 3D NAND fabrication

Published:2024-07 Issue: Volume:50 Page:104515
ISSN:2468-0230
Container-title:Surfaces and Interfaces
language:en
Short-container-title:Surfaces and Interfaces

Author:

Zhou Zihan^ORCID,Wu Yunwen^ORCID,Han Silin,Hang Tao,Ling Huiqin,Guo Jie,Wang Su,Li Ming

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference60 articles.

1. Review of Semiconductor Flash Memory Devices for Material and Process Issues;Kim;Adv. Mater.,2022

2. Nanophotonic identification of defects buried in three-dimensional NAND flash memory devices;Yoon;Nat. Electron.,2018

3. 3D NAND Flash Status and Trends;Heineck,2022

4. Impact of etch angles on cell characteristics in 3D NAND flash memory;Oh;Microelectronics J,2018

5. A novel solution to improve saddle-shape warpage in 3D NAND flash memory;Shi;Semicond. Sci. Technol.,2020

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