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Impact of etch angles on cell characteristics in 3D NAND flash memory

  • Published:2018-09 Issue: Volume:79 Page:1-6
  • ISSN:0026-2692
  • Container-title:Microelectronics Journal
  • language:en
  • Short-container-title:Microelectronics Journal

Author:

Oh Young-Taek,Kim Kyu-Beom,Shin Sang-Hoon,Sim Hahng,Van Toan Nguyen,Ono Takahito,Song Yun-Heub

Funder

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Publisher

Elsevier BV

Subject

General Engineering

Reference19 articles.

1. Bit cost scalable technology with punch and plug process for ultra high density flash memory;Tanaka,2007

2. Vertical cell array using TCAT (Terabit Cell Array Transistor) technology for ultra high density NAND flash memory;Jang,2009

3. Multi-layered vertical gate NAND flash overcoming stacking limit for terabit density storage;Kim,2009

4. Evolution of NAND flash memory: from 2D to 3D as a storage market leader;Kim,2017

5. Technology scaling challenges and opportunities of memory devices;Lee,2016

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