Compact Physical Modeling of Trapping Effects for Microwave GaN HEMT
Author:
Affiliation:
1. University of Electronic Science and Technology of China,School of Electronic Science and Engineering,Chengdu,China
Funder
Research and Development
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9790065/9790355/09790642.pdf?arnumber=9790642
Reference11 articles.
1. Facilitation of GaN-Based RF- and HV-Circuit Designs Using MVS-GaN HEMT Compact Model
2. continuous hemt model for spice;qu;Electronics Letters,1996
3. Accurate Modeling of GaN HEMT RF Behavior Using an Effective Trapping Potential
4. A Quasi-Physical Compact Large-Signal Model for AlGaN/GaN HEMTs
5. ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part-II: Modeling of Charge Trapping
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2. Recent Progress of AlGaN/GaN HEMTs QPZD Model;2024 2nd International Symposium of Electronics Design Automation (ISEDA);2024-05-10
3. An Improved Noise Modeling Method Using a Quasi-Physical Zone Division Model for AlGaN/GaN HEMTs;IEEE Transactions on Electron Devices;2023-04
4. Characterization and Modeling of Trapping Effects in GaAs Enhanced HEMT under High Input Dynamic Range;2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA);2022-10-28
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