Recent Progress of AlGaN/GaN HEMTs QPZD Model-Reference-Cited by-同舟云学术

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Recent Progress of AlGaN/GaN HEMTs QPZD Model

Published:2024-05-10 Issue: Volume: Page:26-31
ISSN:
Container-title:2024 2nd International Symposium of Electronics Design Automation (ISEDA)
language:
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Author:

Su Xiang¹,Mao Shuman¹,Xu Yuehang²

Affiliation:

1. Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou,Huzhou,China,313001

2. School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu,Chengdu,China,611731

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10616249/10617469/10617668.pdf?arnumber=10617668

Reference21 articles.

1. A Scalable Large-Signal Multiharmonic Model of AlGaN/GaN HEMTs and Its Application in C-Band High Power Amplifier MMIC

2. Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices

3. Facilitation of GaN-Based RF- and HV-Circuit Designs Using MVS-GaN HEMT Compact Model

4. A MODFET dc model with improved pinchoff and saturation characteristics

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