Funder
National Natural Science Foundation of China
China Post-Doctoral Science Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Radiation
Cited by
79 articles.
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1. A Deep Cutoff Capacitance Model for GaN Switch HEMTs;IEEE Transactions on Electron Devices;2024-09
2. Investigation and Modeling of Scalability in ISV and OSV GaN HEMTs;IEEE Microwave and Wireless Technology Letters;2024-09
3. Physics‐based compact models of GaN HEMTs for high power RF applications: A review (Invited Paper);International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-07
4. Recent Progress of AlGaN/GaN HEMTs QPZD Model;2024 2nd International Symposium of Electronics Design Automation (ISEDA);2024-05-10
5. Hyper‐parameter optimized GPR model based on chaos game algorithm for RF power transistors;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-05