Funder
NSF-NEEDS
SMART-LEES
Si2-Compact Model Coalition
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
70 articles.
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1. A Deep Cutoff Capacitance Model for GaN Switch HEMTs;IEEE Transactions on Electron Devices;2024-09
2. Measurement and Modeling of GaN HEMTs Operating at 500 °C;2024 IEEE Canadian Conference on Electrical and Computer Engineering (CCECE);2024-08-06
3. Physics‐based compact models of GaN HEMTs for high power RF applications: A review (Invited Paper);International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-07
4. Physics-based Compact Model for Multi-channel AlGaN/GaN Schottky Barrier Diodes;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
5. Aging Reliability Compact Modeling of Trap Effects in Power GaN HEMTs;IEEE Transactions on Device and Materials Reliability;2024-06