Continuous HEMT model for SPICE

Author:

Qu G.,Parker A.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Compact Physical Modeling of Trapping Effects for Microwave GaN HEMT;2021 IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition (iWEM);2021-11-28

2. Modeling of a 20 W GaN HEMT Using QPZD Model;2020 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO);2020-12-07

3. Analysis of Drain-Current Nonlinearity Using Surface-Potential-Based Model in GaAs pHEMTs;IEEE Transactions on Microwave Theory and Techniques;2013-09

4. Improved empirical non-linear compact model for studying intermodulation in HEMTs and LDMOSFETs;Solid-State Electronics;2013-03

5. Nonlinear Transistor Modeling for Circuit Simulation;Electrical Engineering Handbook;2007-12-22

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