An Improved Noise Modeling Method Using a Quasi-Physical Zone Division Model for AlGaN/GaN HEMTs
Author:
Affiliation:
1. Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, China
2. School of Electrical Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Funder
National Natural Science Foundation of China
Sichuan Province Engineering Research Center for Broadband Microwave Circuit High Density Integration
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10081247/10061165.pdf?arnumber=10061165
Reference36 articles.
1. Thermal Noise in Field-Effect Transistors
2. A physical model for the kink effect in InAlAs/InGaAs HEMTs
3. Physics-Informed Neural Network for High Frequency Noise Performance in Quasi-Ballistic MOSFETs
4. Temperature dependent analytical model for current–voltage characteristics of AlGaN/GaN power HEMT
5. GaN HEMT noise model performance under nonlinear operation;rudolph;Proc European Microwave Integrated Circuits Conf,2014
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