Characterization and Modeling of Trapping Effects in GaAs Enhanced HEMT under High Input Dynamic Range-Reference-Cited by-同舟云学术

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Characterization and Modeling of Trapping Effects in GaAs Enhanced HEMT under High Input Dynamic Range

Published:2022-10-28 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)
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Author:

Huang Lei¹,Wang Huanpeng²,Wu Qingzhi¹,Mao Shuman²,Xu Yuehang¹

Affiliation:

1. School of Electronic Science and Engineering, University of Electronic Science and Technology of China,Chengdu,P.R. China,611731

2. Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China,Huzhou,P. R. China,313001

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9962812/9962965/09963103.pdf?arnumber=9963103

Reference5 articles.

1. Modelling of the trap related parasitic effects in metamorphic HEMT on GaAs substrate

2. A Yield-Improvement Method for Millimeter-Wave GaN MMIC Power Amplifier Design Based on Load—Pull Analysis

3. Compact Physical Modeling of Trapping Effects for Microwave GaN HEMT

4. A Quasi-Physical Compact Large-Signal Model for AlGaN/GaN HEMTs

5. Applications for GaAs and silicon integrated circuits in next generation wireless communication systems

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physics‐based compact models of GaN HEMTs for high power RF applications: A review (Invited Paper);International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-07

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