Void-Free Room-Temperature Silicon Wafer Direct Bonding Using Sequential Plasma Activation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference14 articles.
1. Void-free low-temperature silicon direct-bonding technique using plasma activation
2. Wafer Bonding Techniques for MEMS
3. Comparison of medium-vacuum and plasma-activated low-temperature wafer bonding
4. Low-temperature direct bonding of silicon and silicon dioxide by the surface activation method
5. Self-assembly of epitaxial monolayers for vacuum wafer bonding
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