Void-free low-temperature silicon direct-bonding technique using plasma activation-Reference-Cited by-同舟云学术

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Void-free low-temperature silicon direct-bonding technique using plasma activation

Published:2007 Issue:1 Volume:25 Page:229
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Ma Xiaobo,Liu Weili,Song Zhitang,Li Wei,Lin Chenglu

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. A New Adhesive for CoW Cu-Cu Hybrid Bonding with High Throughput and Room Temperature pre-Bonding;2023 IEEE 73rd Electronic Components and Technology Conference (ECTC);2023-05

3. High structural and optical quality of III-V-on-Si 1.2 nm-thick oxide-bonded hybrid interface;Microelectronic Engineering;2018-05

4. Low-temperature direct bonding of silicon nitride to glass;RSC Advances;2018

5. Innovative Ge–SiO2 bonding based on an intermediate ultra-thin silicon layer;Journal of Materials Science: Materials in Electronics;2017-03-29

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