Low-temperature direct bonding of silicon and silicon dioxide by the surface activation method-Reference-Cited by-同舟云学术

Low-temperature direct bonding of silicon and silicon dioxide by the surface activation method

Published:1998-10 Issue:1-2 Volume:70 Page:164-170
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Takagi Hideki,Maeda Ryutaro,Chung Teak Ryong,Suga Tadatomo

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. A Coriolis mass flow sensor structure in silicon;Enoksson,1996

2. Tensile strength characterization of low-temperature fusion-bonded silicon wafers;Müller;J. Micromech. Microeng.,1991

3. Low temperature wafer direct bonding;Tong;J. Microelectromech. Syst.,1994

4. Generalized reaction bonding;Goetz,1991

5. Chemical free room temperature wafer to wafer direct bonding;Farrens;J. Electrochem. Soc.,1995

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