Room temperature wafer bonding through conversion of polysilazane into $$\hbox {SiO}_{2}$$

Abstract

AbstractRoom temperature wafer bonding is a desirable approach for the packaging and assembly of diverse electronic devices. The formation of $$\hbox {SiO}_{2}$$ SiO 2 layer at the bonding interface is crucial for a reliable wafer bonding as represented by conventional bonding techniques such as hydrophilic bonding and glass frit bonding. This paper reports a novel concept of room temperature wafer bonding based on the conversion of polysilazane to $$\hbox {SiO}_{2}$$ SiO 2 at the bonding interface. As polysilazane is converted to $$\hbox {SiO}_{2}$$ SiO 2 by hydrolysis, in this work, adsorbed water is introduced to the bonding interface by plasma treatment, thereby facilitating the formation of $$\hbox {SiO}_{2}$$ SiO 2 at the wafer bonding interface. The experimental results indicate that the adsorbed water from the plasma treatment diffuses into the polysilazane layer and facilitates its hydrolysis and conversion. The proposed method demonstrates the successful wafer bonding at room temperature with high bond strength without interfacial voids. This technique will provide a new approach of bonding wafers at room temperature for electronics packaging.